H5AN8G6NAFR-RDC vs H5AN8G4NAFR-RDC 比較

詳細並排比較 H5AN8G6NAFR-RDC 由 SK hynix 與 H5AN8G4NAFR-RDC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5AN8G6NAFR-RDC H5AN8G6NAFR-RDC - 8Gb DDR4 SDRAM 512Mx16 | SK Hynix

H5AN8G6NAFR-RDC - 8Gb DDR4 SDRAM 512Mx16 | SK Hynix

H5AN8G6NAFR-RDC ✓ 啟用中
SK hynix
H5AN8G4NAFR-RDC H5AN8G4NAFR-RDC - 8Gb DDR4 SDRAM x4 1.2V | SK hynix

H5AN8G4NAFR-RDC - 8Gb DDR4 SDRAM x4 1.2V | SK hynix

H5AN8G4NAFR-RDC ✓ 啟用中

規格比較

參數 H5AN8G6NAFR-RDC H5AN8G4NAFR-RDC
品牌 SK hynix SK hynix
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM DDR4 SDRAM
Memory Density 8 Gb —
組織 512M x 16 1G x 4
供應電壓 1.2 V —
介面 DDR4 (JEDEC-standard) Synchronous, differential clock CK_t/CK_c
Access Mode Multi Bank Page Burst —
Package Code TFBGA —
Package Shape Rectangular —
Number of Terminals 96 —
安裝類型 Surface Mount Surface Mount
Temperature Grade OTHER (per Partstack listing) —
Technology CMOS —
RoHS 狀態 Compliant (Lead-Free & Halogen-Free) Compliant (Lead-Free)
Speed Grade -RDC (see datasheet for bin timing) —
Family H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC —
Max Clock Rate [DATA_NEEDED: max clock rate for -RDC bin] —
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Density — 8Gb
Supply Voltage (VDD) — 1.2 V
封裝 — FBGA-78
Data Rate Class — [DATA_NEEDED: exact -RDC speed bin MT/s]
CAS Latency (CL) — [DATA_NEEDED: CL for -RDC bin]
Bank Architecture — DDR4 bank-group architecture
無鹵素 — Yes
Refresh — Self-refresh and auto-refresh per DDR4 SDRAM standard
Manufacturer — SK hynix
Datasheet Revision — Rev. 1.2 / Jul. 2017

資料表與資源

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