H5AN8G6NAFR-RDC vs H5AN8G4NAFR-RDC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN8G6NAFR-RDC sa pamamagitan ng SK hynix at H5AN8G4NAFR-RDC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN8G6NAFR-RDC | H5AN8G4NAFR-RDC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 8 Gb | — |
| Organisasyon | 512M x 16 | 1G x 4 |
| Volte ng Pagbibigay | 1.2 V | — |
| Interface | DDR4 (JEDEC-standard) | Synchronous, differential clock CK_t/CK_c |
| Access Mode | Multi Bank Page Burst | — |
| Package Code | TFBGA | — |
| Package Shape | Rectangular | — |
| Number of Terminals | 96 | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature Grade | OTHER (per Partstack listing) | — |
| Technology | CMOS | — |
| Tindminan RoHS | Compliant (Lead-Free & Halogen-Free) | Compliant (Lead-Free) |
| Speed Grade | -RDC (see datasheet for bin timing) | — |
| Family | H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC | — |
| Max Clock Rate | [DATA_NEEDED: max clock rate for -RDC bin] | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Density | — | 8Gb |
| Supply Voltage (VDD) | — | 1.2 V |
| Packhaging | — | FBGA-78 |
| Data Rate Class | — | [DATA_NEEDED: exact -RDC speed bin MT/s] |
| CAS Latency (CL) | — | [DATA_NEEDED: CL for -RDC bin] |
| Bank Architecture | — | DDR4 bank-group architecture |
| Wala sa Halogen | — | Yes |
| Refresh | — | Self-refresh and auto-refresh per DDR4 SDRAM standard |
| Manufacturer | — | SK hynix |
| Datasheet Revision | — | Rev. 1.2 / Jul. 2017 |