H5AN8G6NAFR-UHC vs H5AN8G6NAFR Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G6NAFR-UHC disebabkan oleh SK hynix dan H5AN8G6NAFR disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G6NAFR-UHC | H5AN8G6NAFR |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM (CMOS) | DDR4 SDRAM |
| Memory Density | 8 Gbit | — |
| Organisasi | 512M x 16 | 512M x 16 |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V |
| Kadar Data | 2400 MT/s | 2400 MT/s |
| Clock Architecture | Differential clock (CK_t / CK_c), fully synchronous | — |
| Kemasan | 96-ball FBGA (TFBGA) | 96-ball FBGA |
| Jenis Pemasangan | Surface Mount | — |
| Suhu Operasi | 0C to +85C | 0°C to +85°C |
| Refresh | Auto self-refresh | — |
| Precharge | Auto precharge function | — |
| Reset | Asynchronous reset function | — |
| Data Mask | DM function supported | Yes |
| Termination | Dynamic on-chip termination (ODT) | — |
| Calibration | ZQ calibration function | — |
| Error Checking | CRC function | — |
| Write Leveling | Write leveling function supported | Yes |
| Status RoHS | [DATA_NEEDED: RoHS status] | — |
| Density | — | 8 Gb |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |
| RoHS Compliant | — | Yes |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Dynamic ODT | — | Yes |
| ZQ Calibration | — | Yes |
| CRC | — | Yes |