H5AN8G8NAFR-PBC vs H5AN8G6NAFR-PBC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G8NAFR-PBC disebabkan oleh SK hynix dan H5AN8G6NAFR-PBC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G8NAFR-PBC | H5AN8G6NAFR-PBC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gbit |
| Organisasi | 1G x 8 | 512M x 16 |
| Tegangan Pemberi Arus | 1.2 V | — |
| Kemasan | FBGA-78 | TFBGA-96 (rectangular) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Speed Grade / Data Rate | [DATA_NEEDED: speed grade / data rate] | — |
| Antaramuka | DDR4 (double data rate, synchronized to clock) | — |
| Address Inputs | A0 - A17 (A10/AP, A12/BC_n, RAS_n/A16, CAS_n/A15, WE_n/A14 multiplexed) | — |
| Connectivity Test Mode | TEN (optional input on x4/x8, required on x16) | — |
| Process Technology | CMOS | — |
| Lead-Free | Yes | — |
| Boson Bebas | Yes | — |
| Status RoHS | Compliant | Compliant (Lead-Free & Halogen-Free) |
| Datasheet Revision | Rev. 1.2 / July 2017 | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| VDD Supply Voltage | — | 1.20 V +/- 0.06 V |
| VDDQ Supply Voltage | — | 1.20 V +/- 0.06 V |
| VPP Supply Voltage | — | 2.5 V +0.25/-0.125 V |
| Jenis Antaramuka | — | DDR4 (parallel, double data rate) |
| Speed Bins Supported | — | DDR4-1600 / 1866 / 2133 / 2400 (datasheet speed bin tables) |
| Refresh | — | Auto / Self Refresh |
| DLL | — | DLL ON mode for speed bin operation |
| Clock | — | Differential clock (CK/CK#) |
| Number of Terminals | — | 96 |
| Composition | — | CMOS |