H5AN8G8NAFR-PBC vs H5AN8G8NAFR-UHI Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G8NAFR-PBC disebabkan oleh SK hynix dan H5AN8G8NAFR-UHI disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

SK hynix
H5AN8G8NAFR-PBC H5AN8G8NAFR-PBC - 8Gb DDR4 SDRAM x8 1.2V | SK hynix

H5AN8G8NAFR-PBC - 8Gb DDR4 SDRAM x8 1.2V | SK hynix

H5AN8G8NAFR-PBC ✓ Aktif
SK hynix
H5AN8G8NAFR-UHI H5AN8G8NAFR-UHI - 8Gb DDR4-2400 x8 SDRAM | SK Hynix

H5AN8G8NAFR-UHI - 8Gb DDR4-2400 x8 SDRAM | SK Hynix

H5AN8G8NAFR-UHI ✓ Aktif

Pengandingan Spesifikasi

Parametr H5AN8G8NAFR-PBC H5AN8G8NAFR-UHI
Merek SK hynix SK hynix
Kategori DRAM Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Density 8 Gb —
Organisasi 1G x 8 1G x 8
Tegangan Pemberi Arus 1.2 V 1.2 V
Kemasan FBGA-78 78-ball FBGA
Jenis Pemasangan Surface Mount Surface Mount
Speed Grade / Data Rate [DATA_NEEDED: speed grade / data rate] —
Antaramuka DDR4 (double data rate, synchronized to clock) DDR4 (JEDEC-class)
Address Inputs A0 - A17 (A10/AP, A12/BC_n, RAS_n/A16, CAS_n/A15, WE_n/A14 multiplexed) —
Connectivity Test Mode TEN (optional input on x4/x8, required on x16) —
Process Technology CMOS —
Lead-Free Yes —
Boson Bebas Yes —
Status RoHS Compliant Compliant
Datasheet Revision Rev. 1.2 / July 2017 —
Suhu Operasi [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Memory Density — 8 Gb
Kadar Data — DDR4-2400 (PC2400), 1200 MHz clock
Lead Free — Yes
Boson Bebas — Yes
Technology — CMOS
Application — Main memory (high density, high bandwidth)
Latensi CAS — [DATA_NEEDED: CAS latency for UHI speed grade]
Refresh — [DATA_NEEDED: refresh specification]
Aras MSL — [DATA_NEEDED: moisture sensitivity level]

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