H5AN8G8NAFR-PBC vs H5AN8G8NAFR-UHI 对比

详细并排对比 H5AN8G8NAFR-PBC 出自 SK hynix 和 H5AN8G8NAFR-UHI 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G8NAFR-PBC H5AN8G8NAFR-PBC - 8Gb DDR4 SDRAM x8 1.2V | SK hynix

H5AN8G8NAFR-PBC - 8Gb DDR4 SDRAM x8 1.2V | SK hynix

H5AN8G8NAFR-PBC ✓ 量产中
SK hynix
H5AN8G8NAFR-UHI H5AN8G8NAFR-UHI - 8Gb DDR4-2400 x8 SDRAM | SK Hynix

H5AN8G8NAFR-UHI - 8Gb DDR4-2400 x8 SDRAM | SK Hynix

H5AN8G8NAFR-UHI ✓ 量产中

规格对比

参数 H5AN8G8NAFR-PBC H5AN8G8NAFR-UHI
品牌 SK hynix SK hynix
分类 DRAM Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.20 $4.10
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 8 Gb —
存储组织 1G x 8 1G x 8
电源电压 1.2 V 1.2 V
封装 FBGA-78 78-ball FBGA
安装类型 Surface Mount Surface Mount
Speed Grade / Data Rate [DATA_NEEDED: speed grade / data rate] —
接口 DDR4 (double data rate, synchronized to clock) DDR4 (JEDEC-class)
Address Inputs A0 - A17 (A10/AP, A12/BC_n, RAS_n/A16, CAS_n/A15, WE_n/A14 multiplexed) —
Connectivity Test Mode TEN (optional input on x4/x8, required on x16) —
Process Technology CMOS —
Lead-Free Yes —
无卤 Yes —
RoHS 状态 Compliant Compliant
Datasheet Revision Rev. 1.2 / July 2017 —
工作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Memory Density — 8 Gb
数据速率 — DDR4-2400 (PC2400), 1200 MHz clock
Lead Free — Yes
无卤 — Yes
Technology — CMOS
Application — Main memory (high density, high bandwidth)
CAS 延迟 — [DATA_NEEDED: CAS latency for UHI speed grade]
Refresh — [DATA_NEEDED: refresh specification]
MSL 等级 — [DATA_NEEDED: moisture sensitivity level]

数据手册与资源

浏览全部产品 创建 BOM 获取报价