H5AN8G8NAFR-VKC vs H5AN8G4NAFR-VKC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G8NAFR-VKC disebabkan oleh SK hynix dan H5AN8G4NAFR-VKC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G8NAFR-VKC | H5AN8G4NAFR-VKC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 1G x 8 | 2G x 4 |
| Speed Grade | DDR4-2666 (VKC bin) | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Antaramuka | SSTL12 | — |
| Burst Length | 8 (BL8) | — |
| Bank Group Architecture | Supported (per DDR4 JEDEC architecture) | — |
| On-Die Termination (ODT) | Yes | — |
| DLL | Yes (DLL for output skew control) | — |
| Kemasan | 78-ball FBGA | 78-ball FBGA (PBGA78) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Status RoHS | Compliant (Lead-Free & Halogen-Free) | Compliant (Lead-Free & Halogen-Free) |
| Process Technology | CMOS | — |
| Recommended Application | Main memory requiring large density and high bandwidth | — |
| Kadar Data | — | 2666 Mbps per pin (DDR4-2666) |
| CAS Latency (CL) | — | 19 (CL19, speed bin VK) |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Technology | — | CMOS |
| Family | — | H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC |
| Application | — | Main memory requiring large density and high bandwidth |
| Datasheet Revision | — | Rev. 1.2 (Jul. 2017) |
| Refresh | — | [DATA_NEEDED: Refresh specification] |