H5AN8G8NCJR-VKC vs H5AN8G8NCJR-UHC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G8NCJR-VKC disebabkan oleh SK hynix dan H5AN8G8NCJR-UHC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G8NCJR-VKC | H5AN8G8NCJR-UHC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM (volatile) | DDR4 SDRAM |
| Saiz Ingatan | 8 Gbit | — |
| Memory Organization | 1G x 8 | — |
| Kadar Data | 2666 Mbps/pin | — |
| Clock Frequency | 1.6 GHz | — |
| Supply Voltage (VDD) | 1.14 V to 1.26 V (1.2 V class) | 1.2 V |
| Operating Current (typ) | 30 mA | — |
| Standby Current (typ) | 3 mA | — |
| Suhu Operasi | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Kemasan | FBGA-78 (78-ball fine-pitch BGA) | FBGA-78 |
| Jenis Pemasangan | Surface Mount | Surface Mount (BGA) |
| Antaramuka | Parallel (DDR4) | — |
| Auto Self-Refresh | Yes | — |
| Data Mask Function | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Auto Precharge | Yes | — |
| Status RoHS | Compliant | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | — |
| Refresh Rate | [DATA_NEEDED: refresh period] | — |
| Density | — | 8 Gb |
| Organisasi | — | 1G x 8 |
| Speed Grade | — | DDR4-2400 (PC4-19200) |
| RoHS Code | — | Yes |
| REACH Compliance | — | Yes (per distributor record) |
| Lead-Free | — | Yes (family documented as Lead-Free & Halogen-Free) |
| Boson Bebas | — | Yes |
| Part Life Cycle Code | — | Active |
| Access Type | — | Synchronous, both clock edges (DDR) |
| Memory Configuration | — | Bank-group architecture DDR4 |
| Die Revision | — | CJR (C-die family) |
| Manufacturer | — | SK hynix Inc. |