H5AN8G8NCJR-XNC vs H5AN8G8NCJR-VKC Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G8NCJR-XNC disebabkan oleh SK hynix dan H5AN8G8NCJR-VKC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

SK hynix
H5AN8G8NCJR-VKC H5AN8G8NCJR-VKC - 8Gb DDR4-2666 SDRAM x8 | SK hynix

H5AN8G8NCJR-VKC - 8Gb DDR4-2666 SDRAM x8 | SK hynix

H5AN8G8NCJR-VKC ✓ Aktif

Pengandingan Spesifikasi

Parametr H5AN8G8NCJR-XNC H5AN8G8NCJR-VKC
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) $30.69 —
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM (volatile)
Saiz Ingatan 8 Gbit 8 Gbit
Organisasi 1 Gb x 8 —
Kadar Data 3200 Mbps (DDR4-3200) 2666 Mbps/pin
Clock Frequency 1.6 GHz 1.6 GHz
Tegangan Pemberi Arus 1.14 V to 1.26 V (1.2 V nominal) —
Kemasan 78-ball FBGA, 7.5 mm x 11 mm FBGA-78 (78-ball fine-pitch BGA)
Suhu Operasi 0 C to +85 C 0C to +85C
Jenis Pemasangan Surface Mount Surface Mount
Antaramuka DDR4 (8-bit data interface) Parallel (DDR4)
Architecture Bank-group based DDR4 —
Refresh Auto self-refresh —
Precharge Auto precharge —
On-Chip Termination Dynamic ODT —
Calibration ZQ calibration, write leveling —
Error Handling CRC function —
Reset Asynchronous reset —
Data Mask Data mask function —
Current - Operating 39 mA —
Current - Standby 30 mA —
Status RoHS Compliant Compliant
Lead-Free / Halogen-Free Yes —
Memory Organization — 1G x 8
Supply Voltage (VDD) — 1.14 V to 1.26 V (1.2 V class)
Operating Current (typ) — 30 mA
Standby Current (typ) — 3 mA
Auto Self-Refresh — Yes
Data Mask Function — Yes
Dynamic On-Chip Termination (ODT) — Yes
Asynchronous Reset — Yes
ZQ Calibration — Yes
Write Leveling — Yes
CRC Function — Yes
Auto Precharge — Yes
Latensi CAS — [DATA_NEEDED: CAS Latency]
Refresh Rate — [DATA_NEEDED: refresh period]

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