H5ANAG6NAMR-UHC vs H5ANAG8NCMR-VKC Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5ANAG6NAMR-UHC disebabkan oleh SK hynix dan H5ANAG8NCMR-VKC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr H5ANAG6NAMR-UHC H5ANAG8NCMR-VKC
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Memory Density 16 Gbit (2 GB) —
Organisasi 1G x 16 —
Speed Grade / Data Rate DDR4-2400 (UHC bin, PC4-19200) —
Supply Voltage (VDD) 1.2 V 1.2 V
Architecture CMOS DDR4 with bank groups —
Power Class Normal Power Normal Power
Kemasan FBGA-96 (PBGA96) FBGA-78
Jenis Pemasangan Surface Mount (BGA solder ball) Surface Mount
Suhu Operasi [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Refresh Self-refresh and auto-refresh (DDR4 standard 64 ms) —
Latensi CAS [DATA_NEEDED: CL for UHC bin] [DATA_NEEDED: CAS latency for VK speed bin]
Jenis Antaramuka Parallel, synchronous, double data rate —
Available Speed Bins (family) PB / RD / TF / UH / VK —
Application Class Main memory, embedded, industrial —
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Status Lingkungan Hidup Active production —
Saiz Ingatan — 16 Gb
Memory Organization — 2G x 8
Kadar Data — 2666 Mbps/pin (DDR4-2666)
I/O Voltage (VDDQ) — 1.2 V
Speed Grade — VK (per SK hynix speed-bin suffix)
Bank Groups — 4
Banks Total — 16
Packaging — [DATA_NEEDED: standard packing quantity]
Manufacturer Process — CMOS DRAM

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