H5ANAG6NBJR-RDC vs H5ANAG8NBJR-VKC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5ANAG6NBJR-RDC disebabkan oleh SK hynix dan H5ANAG8NBJR-VKC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5ANAG6NBJR-RDC | H5ANAG8NBJR-VKC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Memory Organization | 16Gb x16 | — |
| Density | 16 Gb | 16 Gbit |
| Kadar Data | 2666 Mbps (speed grade -RDC) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Antaramuka | Synchronous, double data rate | — |
| Clocking | Fully synchronous to both clock edges | — |
| Kemasan | FBGA (Ball Grid Array), surface mount | FBGA-78 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | CMOS | — |
| Standard | JEDEC DDR4 SDRAM | — |
| Application | Main memory | — |
| Suhu Operasi | [DATA_NEEDED: Operating Temperature Range] | 0C to +85C |
| On-Die Termination (ODT) | Supported (DDR4 feature) | — |
| Bank Group Architecture | DDR4 bank groups (per JEDEC DDR4) | — |
| Status RoHS | [DATA_NEEDED: RoHS Status] | Compliant, Lead-Free and Halogen-Free |
| Organisasi | — | 2G x 8 |
| Speed Grade | — | DDR4-2666 (2666 Mbps/pin) |
| Tegangan Pemberi Arus | — | 1.14 V to 1.26 V (VDDQ) |
| Clock Frequency | — | 1.6 GHz (internal interface per distributor data) |
| Standby Current | — | 30 mA (operating, per distributor listing) |
| Auto Self-Refresh | — | Yes |
| Data Mask Function | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| Asynchronous Reset | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Auto Precharge | — | Yes |
| Refresh Interval | — | [DATA_NEEDED: tREFI refresh interval] |