H5ANAG6NBJR-VKC vs H5ANAG8NBJR-RDC Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5ANAG6NBJR-VKC disebabkan oleh SK hynix dan H5ANAG8NBJR-RDC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

SK hynix
H5ANAG8NBJR-RDC H5ANAG8NBJR-RDC - 16Gb DDR4 SDRAM 2Gx8 2666 | SK hynix

H5ANAG8NBJR-RDC - 16Gb DDR4 SDRAM 2Gx8 2666 | SK hynix

H5ANAG8NBJR-RDC ✓ Aktif

Pengandingan Spesifikasi

Parametr H5ANAG6NBJR-VKC H5ANAG8NBJR-RDC
Merek SK hynix SK hynix
Kategori Memory ICs DRAM
Status Lingkungan Hidup Aktif Aktif
Manufacturer SK Hynix —
Part Number H5ANAG6NBJR-VKC —
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Memory Density 16Gb (2GB) —
Organisasi [DATA_NEEDED: x16 organization per datasheet] 2G x 8
Kadar Data 2666 Mbps (per family reference, VKC speed code) —
Tegangan Pemberi Arus 1.2 V (DDR4 standard) —
Antaramuka DDR4, SSTL-12 SSTL12
Kemasan FBGA-96 (PBGA96) 78-ball FBGA
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -40C to +95C (family grade reference) [DATA_NEEDED: Operating Temperature Range]
Auto Self-Refresh Yes —
Data Mask Function Yes —
Asynchronous Reset Yes —
Dynamic On-Chip Termination Yes —
ZQ Calibration Yes —
Write Leveling Yes —
CRC Function Yes —
Status RoHS [DATA_NEEDED: RoHS status] Compliant (lead-free PBGA per family product data)
Density — 16 Gbit
Supply Voltage (VDD) — 1.2 V
I/O Voltage (VDDQ) — 1.2 V
Speed Grade (suffix R) — DDR4-2666 class
Refresh — Self-refresh and auto-refresh (8K/64ms class per family datasheet)
Bank Groups — 4 (per 16Gb DDR4 family datasheet)
Data Strobe — DQS with read/write training
Data Bus Inversion — Supported (DBI)
Latensi CAS — [DATA_NEEDED: CAS Latency]
Status Lingkungan Hidup — Active

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga