H5ANAG6NBJR-VKC vs H5ANAG8NBJR-RDC Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng H5ANAG6NBJR-VKC sa pamamagitan ng SK hynix at H5ANAG8NBJR-RDC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

SK hynix
H5ANAG8NBJR-RDC H5ANAG8NBJR-RDC - 16Gb DDR4 SDRAM 2Gx8 2666 | SK hynix

H5ANAG8NBJR-RDC - 16Gb DDR4 SDRAM 2Gx8 2666 | SK hynix

H5ANAG8NBJR-RDC ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro H5ANAG6NBJR-VKC H5ANAG8NBJR-RDC
Brand SK hynix SK hynix
Kategorya Memory ICs DRAM
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer SK Hynix —
Part Number H5ANAG6NBJR-VKC —
Uri ng Memory DDR4 SDRAM DDR4 SDRAM
Memory Density 16Gb (2GB) —
Organisasyon [DATA_NEEDED: x16 organization per datasheet] 2G x 8
Rate ng Data 2666 Mbps (per family reference, VKC speed code) —
Volte ng Pagbibigay 1.2 V (DDR4 standard) —
Interface DDR4, SSTL-12 SSTL12
Packhaging FBGA-96 (PBGA96) 78-ball FBGA
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon -40C to +95C (family grade reference) [DATA_NEEDED: Operating Temperature Range]
Auto Self-Refresh Yes —
Data Mask Function Yes —
Asynchronous Reset Yes —
Dynamic On-Chip Termination Yes —
ZQ Calibration Yes —
Write Leveling Yes —
CRC Function Yes —
Tindminan RoHS [DATA_NEEDED: RoHS status] Compliant (lead-free PBGA per family product data)
Density — 16 Gbit
Supply Voltage (VDD) — 1.2 V
I/O Voltage (VDDQ) — 1.2 V
Speed Grade (suffix R) — DDR4-2666 class
Refresh — Self-refresh and auto-refresh (8K/64ms class per family datasheet)
Bank Groups — 4 (per 16Gb DDR4 family datasheet)
Data Strobe — DQS with read/write training
Data Bus Inversion — Supported (DBI)
Latensya ng CAS — [DATA_NEEDED: CAS Latency]
Katayuan ng Lifecycle — Active

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