H5TC4G63CFR-PBA vs H5TC4G63MFR-PBA Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5TC4G63CFR-PBA disebabkan oleh SK hynix dan H5TC4G63MFR-PBA disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5TC4G63CFR-PBA | H5TC4G63MFR-PBA |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $6.23 | — |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V +0.100/-0.067V | 1.35V (+0.100V/-0.067V) |
| Kemasan | 96-ball FBGA (PBGA96) | 96-ball FBGA |
| Clock Input | Fully differential (CK, CK) | — |
| Data Strobe | Differential (DQS, DQS) | — |
| On-chip DLL | Yes | — |
| Data Mask (DM) | Yes | — |
| Auto Precharge | Yes | — |
| Auto Self-Refresh | Yes | Yes |
| Dynamic ODT | Yes | — |
| ZQ Calibration | Yes | Yes |
| Write Leveling | Yes | Yes |
| Asynchronous Reset | Yes | — |
| RoHS | Compliant | — |
| Boson Bebas | Yes | — |
| Lead-Free | Yes | — |
| Kadar Data | — | 1866 Mbps (PC3L-14900) |
| Number of Banks | — | 8 |
| Burst Length | — | BL8, BL4 (with burst chop) |
| CAS Latency (CL) | — | Programmable |
| CAS Write Latency (CWL) | — | Programmable |
| Additive Latency | — | Programmable |
| On-Die Termination (ODT) | — | Yes |
| Temperature-Compensated Self-Refresh | — | Yes |
| Process Technology | — | 30nm-class |
| RoHS Compliant | — | Yes (Lead-Free & Halogen-Free) |