H5TC4G63CFR-PBA vs H5TC4G63MFR-PBA Comparison

Detailed side-by-side comparison of H5TC4G63CFR-PBA by SK hynix and H5TC4G63MFR-PBA by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5TC4G63CFR-PBA H5TC4G63CFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63CFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63CFR-PBA ✓ Active
SK hynix
H5TC4G63MFR-PBA H5TC4G63MFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63MFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63MFR-PBA ✓ Active

Specification Comparison

Parameter H5TC4G63CFR-PBA H5TC4G63MFR-PBA
Brand SK hynix SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Unit Price (USD) $6.23 —
Memory Type DDR3L SDRAM DDR3L SDRAM
Density 4Gb 4 Gb
Organization 256M x 16 256M x 16
Supply Voltage (VDD/VDDQ) 1.35V +0.100/-0.067V 1.35V (+0.100V/-0.067V)
Package 96-ball FBGA (PBGA96) 96-ball FBGA
Clock Input Fully differential (CK, CK) —
Data Strobe Differential (DQS, DQS) —
On-chip DLL Yes —
Data Mask (DM) Yes —
Auto Precharge Yes —
Auto Self-Refresh Yes Yes
Dynamic ODT Yes —
ZQ Calibration Yes Yes
Write Leveling Yes Yes
Asynchronous Reset Yes —
RoHS Compliant —
Halogen Free Yes —
Lead-Free Yes —
Data Rate — 1866 Mbps (PC3L-14900)
Number of Banks — 8
Burst Length — BL8, BL4 (with burst chop)
CAS Latency (CL) — Programmable
CAS Write Latency (CWL) — Programmable
Additive Latency — Programmable
On-Die Termination (ODT) — Yes
Temperature-Compensated Self-Refresh — Yes
Process Technology — 30nm-class
RoHS Compliant — Yes (Lead-Free & Halogen-Free)

Datasheets & Resources

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