H5TC4G63CFR-PBA vs H5TC4G63MFR-PBA Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5TC4G63CFR-PBA sa pamamagitan ng SK hynix at H5TC4G63MFR-PBA sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5TC4G63CFR-PBA | H5TC4G63MFR-PBA |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | $6.23 | — |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| Organisasyon | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V +0.100/-0.067V | 1.35V (+0.100V/-0.067V) |
| Packhaging | 96-ball FBGA (PBGA96) | 96-ball FBGA |
| Clock Input | Fully differential (CK, CK) | — |
| Data Strobe | Differential (DQS, DQS) | — |
| On-chip DLL | Yes | — |
| Data Mask (DM) | Yes | — |
| Auto Precharge | Yes | — |
| Auto Self-Refresh | Yes | Yes |
| Dynamic ODT | Yes | — |
| ZQ Calibration | Yes | Yes |
| Write Leveling | Yes | Yes |
| Asynchronous Reset | Yes | — |
| RoHS | Compliant | — |
| Wala sa Halogen | Yes | — |
| Lead-Free | Yes | — |
| Rate ng Data | — | 1866 Mbps (PC3L-14900) |
| Number of Banks | — | 8 |
| Burst Length | — | BL8, BL4 (with burst chop) |
| CAS Latency (CL) | — | Programmable |
| CAS Write Latency (CWL) | — | Programmable |
| Additive Latency | — | Programmable |
| On-Die Termination (ODT) | — | Yes |
| Temperature-Compensated Self-Refresh | — | Yes |
| Process Technology | — | 30nm-class |
| RoHS Compliant | — | Yes (Lead-Free & Halogen-Free) |