H5TC4G63MFR-PBA vs H5TC4G63AFR-PBA Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5TC4G63MFR-PBA disebabkan oleh SK hynix dan H5TC4G63AFR-PBA disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5TC4G63MFR-PBA | H5TC4G63AFR-PBA |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $3.98 |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V (+0.100V/-0.067V) | 1.35V |
| Kadar Data | 1866 Mbps (PC3L-14900) | 1866 Mbps (PC3L-14900) |
| Kemasan | 96-ball FBGA | 96-ball FBGA |
| Number of Banks | 8 | 8 |
| Burst Length | BL8, BL4 (with burst chop) | 8 and 4 (with burst chop) |
| CAS Latency (CL) | Programmable | 11, 12, 13 |
| CAS Write Latency (CWL) | Programmable | — |
| Additive Latency | Programmable | — |
| On-Die Termination (ODT) | Yes | Yes |
| ZQ Calibration | Yes | Yes |
| Write Leveling | Yes | Yes |
| Auto Self-Refresh | Yes | Yes |
| Temperature-Compensated Self-Refresh | Yes | — |
| Process Technology | 30nm-class | — |
| RoHS Compliant | Yes (Lead-Free & Halogen-Free) | — |
| Ball Pitch | — | 0.8mm |
| Gambaran Suhu Operasi | — | 0°C to +95°C (Tcase) |
| Antaramuka | — | 16-bit I/O |
| Partial Array Self-Refresh | — | Yes |
| RoHS | — | Compliant |