H5TC4G63MFR-PBA vs MT41K256M16HA-15EM:E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5TC4G63MFR-PBA disebabkan oleh SK hynix dan MT41K256M16HA-15EM:E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
MT41K256M16HA-15EM:E - 4Gb DDR3L SDRAM 256Mx16 | Micron
MT41K256M16HA-15EM:E ✓ AktifPengandingan Spesifikasi
| Parametr | H5TC4G63MFR-PBA | MT41K256M16HA-15EM:E |
|---|---|---|
| Merek | SK hynix | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gbit |
| Organisasi | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V (+0.100V/-0.067V) | — |
| Kadar Data | 1866 Mbps (PC3L-14900) | 1333 Mbps (DDR3L-1333) |
| Kemasan | 96-ball FBGA | 96-ball FBGA (9x14mm) |
| Number of Banks | 8 | — |
| Burst Length | BL8, BL4 (with burst chop) | — |
| CAS Latency (CL) | Programmable | — |
| CAS Write Latency (CWL) | Programmable | — |
| Additive Latency | Programmable | — |
| On-Die Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Auto Self-Refresh | Yes | — |
| Temperature-Compensated Self-Refresh | Yes | — |
| Process Technology | 30nm-class | — |
| RoHS Compliant | Yes (Lead-Free & Halogen-Free) | — |
| Tegangan Pemberi Arus | — | 1.35 V (1.5V compatible) |
| Latensi CAS | — | 15 |
| Jenis Pemasangan | — | Surface Mount |
| Suhu Operasi | — | [DATA_NEEDED: operating temperature range] |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Bilangan Pin | — | 96 |
| Access Time | — | 13.75 ns |
| Clock Frequency | — | 800 MHz |
| Antaramuka | — | Parallel |