IAUC100N04S6L020ATMA1 vs IAUC80N04S6N036ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC100N04S6L020ATMA1 disebabkan oleh Infineon dan IAUC80N04S6N036ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC80N04S6N036ATMA1 IAUC80N04S6N036ATMA1 - 40V 80A OptiMOS-6 N-MOSFET | Infineon

IAUC80N04S6N036ATMA1 - 40V 80A OptiMOS-6 N-MOSFET | Infineon

IAUC80N04S6N036ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUC100N04S6L020ATMA1 IAUC80N04S6N036ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Breakdown Voltage V(BR)DSS 40 V —
Continuous Drain Current (Tc) 100 A —
Power Dissipation (Tc) 75 W —
RDS(on) Maximum @ VGS=10V, ID=50A 2.04 mΩ —
RDS(on) Typical 2.0 mΩ —
Gate-Source Voltage VGS (max) ±20 V —
Gate Threshold Voltage VGS(th) Typical 2.0 V —
Technology OptiMOS 6 —
Gambaran Suhu Operasi -55 °C to +175 °C (TJ) -55 C to +175 C
Kemasan PG-TDSON-8 (SS08, 5x6 mm leadless) PG-TDSON-8 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Qualification Automotive grade —
Packaging Tape & Reel (TMA1) —
Status RoHS Compliant —
Manufacturer — Infineon Technologies
Part Family — OptiMOS-6 40 V
Polarity — N-Channel
Drain-Source Voltage (V_DS) — 40 V
Gate-Source Voltage (V_GS) — [DATA_NEEDED: max V_GS rating]
Continuous Drain Current (I_D) at T_C — 80 A
Power Dissipation (P_D) at T_C — 50 W
On-Resistance R_DS(on) max at V_GS=10V — 3.6 mOhm
On-Resistance R_DS(on) max at V_GS=4.5V — [DATA_NEEDED: R_DS(on) at V_GS=4.5V]
AEC-Q101 Qualification — Qualified (Automotive)
Aras MSL — 1 (per JEDEC J-STD-020)
Terminal Finish — Tin (Sn) (e3 per JESD-609)
Peak Reflow Temperature — 260 C (per JEDEC J-STD-020)
Compliance - RoHS — Compliant
Compliance - REACH — Compliant

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