IAUC100N04S6L025ATMA1 vs BSC076N06NS3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC100N04S6L025ATMA1 disebabkan oleh Infineon dan BSC076N06NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC100N04S6L025ATMA1 IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L025ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUC100N04S6L025ATMA1 BSC076N06NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 6 40V trench MOSFET N-Channel Trench MOSFET
Polarity N-Channel —
Drain-Source Voltage (VDS) 40 V 60 V
Continuous Drain Current (ID) at TC=25C 100 A 50 A
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulse rating] —
On-State Resistance RDS(on) max at VGS=10V 2.5 mOhm —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] [DATA_NEEDED: Qg value]
Power Dissipation (PD) at TC=25C 62 W —
Suhu Hubungan Operasi -55 C to +175 C —
Kemasan PG-TDSON-8 (SuperSO8 5x6 mm) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
Aras MSL 1 (per JEDEC J-STD-020) 1 (unlimited)
Status RoHS Compliant —
Lead-Free Yes —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 3
On-Resistance RDS(on) max at VGS=10V — 7.6 mΩ
On-Resistance RDS(on) max at VGS=4.5V — 10.4 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — 2.0 V to 3.5 V
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 69 W
Gambaran Suhu Operasi — -55C to +150C
RoHS Compliance — Compliant
Boson Bebas — Yes (per Infineon product page)

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