IAUC120N06S5N011ATMA1 vs IAUCN08S7L033ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC120N06S5N011ATMA1 disebabkan oleh Infineon dan IAUCN08S7L033ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUC120N06S5N011ATMA1 IAUCN08S7L033ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-5 —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (Vdss) 60 V —
Continuous Drain Current (Id) 120 A (Tc=25°C, Vgs=10V) —
Pulsed Drain Current (Idm) 310 A (Tj) —
On-Resistance Rds(on) max 1.1 mΩ at Vgs=10 V —
Gate-Source Voltage (Vgs) max ±20 V —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total value] —
Power Dissipation (Pd) 188 W (Tc=25°C) —
Gambaran Suhu Operasi -55°C to +175°C (Tj) -55°C to +175°C (TJ)
Kemasan PG-TDSON-8-53 (SSO8 5x6 mm) PG-TDSON-8-34 (SSO8, 5x6 mm²)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
RoHS Compliance Compliant —
Aras MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020, typical for this package)
Series — Automotive OptiMOS 7
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 80 V
Maximum On-Resistance (RDS(on)) at VGS=10V — 3.3 mΩ
Continuous Drain Current (ID) at Tj — 130 A
Continuous Drain Current (ID) at Tc=25°C — [DATA_NEEDED: ID at Tc=25C]
Power Dissipation (PD) at Tc=25°C — 118 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Gate-Source Voltage (VGS) max — ±20 V (typical Infineon OptiMOS 7 limit)
Qualification — Automotive Grade (per Infineon datasheet header)
Technology — OptiMOS 7 trench MOSFET
Status RoHS — Compliant

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