IAUC60N04S6L039ATMA1 vs IAUC120N04S6L005ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC60N04S6L039ATMA1 disebabkan oleh Infineon dan IAUC120N04S6L005ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUC120N04S6L005ATMA1 - 40V 120A 0.55mΩ N-Channel MOSFET | Infineon
IAUC120N04S6L005ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUC60N04S6L039ATMA1 | IAUC120N04S6L005ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 6 (trench) | OptiMOS 6, N-Channel Trench MOSFET |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, T_C=25C) | 60 A | — |
| Pulsed Drain Current (I_DM) | 240 A | — |
| R_DS(on) max @ V_GS=10V | 3.9 milliohm | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Q_G) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (P_D) | 42 W | — |
| Suhu Hubungan Operasi | -55C to +175C | -55 °C to +175 °C |
| Kemasan | PG-TDSON-8 (SSO8) 5x6 mm | PG-TDSON-8-53 (5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Status RoHS | Compliant | Compliant |
| Avalanche Rated | Yes (100% avalanche tested) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IAUC120N04S6L005ATMA1 |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 120 A (Tj) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulse rating] |
| Power Dissipation (PD, Tc=25°C) | — | 187 W |
| RDS(on) max at VGS=10 V | — | 0.55 mΩ at 60 A |
| RDS(on) max at VGS=4.5 V | — | 0.85 mΩ |
| Gate-Source Voltage (VGS) | — | ±16 V |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Total Gate Charge (Qg) | — | 177 nC at VGS=10 V |
| Input Capacitance (Ciss) | — | 11.203 nF at 25 V |
| Output Capacitance (Coss) | — | 2.982 nF |
| Reverse Transfer Capacitance (Crss) | — | 175 pF |