IAUC60N06S5L073ATMA1 vs BSC0911NDATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC60N06S5L073ATMA1 disebabkan oleh Infineon dan BSC0911NDATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC60N06S5L073ATMA1 IAUC60N06S5L073ATMA1 - 60V 60A OptiMOS 5 MOSFET | Infineon

IAUC60N06S5L073ATMA1 - 60V 60A OptiMOS 5 MOSFET | Infineon

IAUC60N06S5L073ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUC60N06S5L073ATMA1 BSC0911NDATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
Jenis Transistor N-Channel MOSFET —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Tj 60 A —
On-Resistance RDS(on) max 7.3 mΩ —
Total Gate Charge (QG) 17.4 nC —
Power Dissipation (PD) at Tc 52 W —
Kemasan PG-TDSON-8-33 (5x6 mm) PG-TISON-8 (8-PowerTDFN)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +175C —
Technology Trench (OptiMOS 5) OptiMOS trench MOSFET
Bilangan Pin 8 —
Configuration Single N-Channel Dual N-Channel (2 N-CH)
Qualification AEC-Q101 automotive grade —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical] —
Thermal Resistance RθJA [DATA_NEEDED: thermal resistance junction-to-ambient] —
Product Family — OptiMOS 25V
Drain-Source Voltage (VDS) — 25 V
Continuous Drain Current (ID) — 18 A
Pulsed Drain Current (IDM) — 30 A
Power Dissipation (PD) — 1 W
Suhu Operasi — -55C to +150C (junction)
Channel Type — N-Channel Enhancement Mode
Gate Threshold (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) at 10V VGS]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]

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