IAUC60N06S5L073ATMA1 vs BSC0911NDATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUC60N06S5L073ATMA1 sa pamamagitan ng Infineon at BSC0911NDATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUC60N06S5L073ATMA1 - 60V 60A OptiMOS 5 MOSFET | Infineon
IAUC60N06S5L073ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUC60N06S5L073ATMA1 | BSC0911NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tj | 60 A | — |
| On-Resistance RDS(on) max | 7.3 mΩ | — |
| Total Gate Charge (QG) | 17.4 nC | — |
| Power Dissipation (PD) at Tc | 52 W | — |
| Packhaging | PG-TDSON-8-33 (5x6 mm) | PG-TISON-8 (8-PowerTDFN) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +175C | — |
| Technology | Trench (OptiMOS 5) | OptiMOS trench MOSFET |
| Bilang ng Pins | 8 | — |
| Configuration | Single N-Channel | Dual N-Channel (2 N-CH) |
| Qualification | AEC-Q101 automotive grade | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Thermal Resistance RθJA | [DATA_NEEDED: thermal resistance junction-to-ambient] | — |
| Product Family | — | OptiMOS 25V |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) | — | 18 A |
| Pulsed Drain Current (IDM) | — | 30 A |
| Power Dissipation (PD) | — | 1 W |
| Temperature na Operasyon | — | -55C to +150C (junction) |
| Channel Type | — | N-Channel Enhancement Mode |
| Gate Threshold (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) at 10V VGS] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |