IAUC60N06S5L073ATMA1 vs BSC0911NDATMA1 比較
詳細並排比較 IAUC60N06S5L073ATMA1 由 Infineon 與 BSC0911NDATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IAUC60N06S5L073ATMA1 | BSC0911NDATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tj | 60 A | — |
| On-Resistance RDS(on) max | 7.3 mΩ | — |
| Total Gate Charge (QG) | 17.4 nC | — |
| Power Dissipation (PD) at Tc | 52 W | — |
| 封裝 | PG-TDSON-8-33 (5x6 mm) | PG-TISON-8 (8-PowerTDFN) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55C to +175C | — |
| Technology | Trench (OptiMOS 5) | OptiMOS trench MOSFET |
| 腳位數 | 8 | — |
| Configuration | Single N-Channel | Dual N-Channel (2 N-CH) |
| Qualification | AEC-Q101 automotive grade | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Thermal Resistance RθJA | [DATA_NEEDED: thermal resistance junction-to-ambient] | — |
| Product Family | — | OptiMOS 25V |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) | — | 18 A |
| Pulsed Drain Current (IDM) | — | 30 A |
| Power Dissipation (PD) | — | 1 W |
| 工作溫度 | — | -55C to +150C (junction) |
| Channel Type | — | N-Channel Enhancement Mode |
| Gate Threshold (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) at 10V VGS] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |