IAUC64N08S5L075ATMA1 vs IAUZ40N08S5N100ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC64N08S5L075ATMA1 disebabkan oleh Infineon dan IAUZ40N08S5N100ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUC64N08S5L075ATMA1 - 80V 7.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon
IAUC64N08S5L075ATMA1 ✓ AktifInfineon
IAUZ40N08S5N100ATMA1 - 80V 40A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ40N08S5N100ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUC64N08S5L075ATMA1 | IAUZ40N08S5N100ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | IAUC64N08S5L075ATMA1 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS™ 5 | OptiMOS-5 N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (ID) at TC=25°C | 64 A (TJ-limited) | — |
| On-Resistance (RDS(on)) max at VGS=10V | 7.5 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage absolute maximum] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at TC=25°C | 75 W | — |
| Suhu Hubungan Operasi | -55 °C to +175 °C | — |
| Kemasan | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8 (S3O8) 3.3 × 3.3 mm |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS Compliance | Compliant | — |
| Aras MSL | MSL1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Bilangan Pin | 8 | — |
| Continuous Drain Current (ID, Tc=25°C) | — | 40 A |
| Power Dissipation (PD, Tc=25°C) | — | 68 W |
| On-Resistance RDS(on) max | — | 10 mΩ @ VGS=10 V, ID=20 A |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge Qg typ | — | 24.2 nC @ VGS=10 V |
| Input Capacitance Ciss | — | 1591 pF @ VDS=40 V |
| Gate-Source Voltage VGS max | — | ±20 V |
| Gambaran Suhu Operasi | — | -55 °C to +175 °C (TJ) |
| Status RoHS | — | Compliant |
| Channel Type | — | N-Channel |