IAUC64N08S5L075ATMA1 vs IAUZ40N08S5N100ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUC64N08S5L075ATMA1 sa pamamagitan ng Infineon at IAUZ40N08S5N100ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUC64N08S5L075ATMA1 - 80V 7.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon
IAUC64N08S5L075ATMA1 ✓ NakahandaInfineon
IAUZ40N08S5N100ATMA1 - 80V 40A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ40N08S5N100ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUC64N08S5L075ATMA1 | IAUZ40N08S5N100ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Number | IAUC64N08S5L075ATMA1 | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS™ 5 | OptiMOS-5 N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (ID) at TC=25°C | 64 A (TJ-limited) | — |
| On-Resistance (RDS(on)) max at VGS=10V | 7.5 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage absolute maximum] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at TC=25°C | 75 W | — |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | — |
| Packhaging | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8 (S3O8) 3.3 × 3.3 mm |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS Compliance | Compliant | — |
| Level ng MSL | MSL1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Bilang ng Pins | 8 | — |
| Continuous Drain Current (ID, Tc=25°C) | — | 40 A |
| Power Dissipation (PD, Tc=25°C) | — | 68 W |
| On-Resistance RDS(on) max | — | 10 mΩ @ VGS=10 V, ID=20 A |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge Qg typ | — | 24.2 nC @ VGS=10 V |
| Input Capacitance Ciss | — | 1591 pF @ VDS=40 V |
| Gate-Source Voltage VGS max | — | ±20 V |
| Hanay ng Temperature na Operasyon | — | -55 °C to +175 °C (TJ) |
| Tindminan RoHS | — | Compliant |
| Channel Type | — | N-Channel |