IAUC90N10S5N062ATMA1 vs IAUT300N10S5N015ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC90N10S5N062ATMA1 disebabkan oleh Infineon dan IAUT300N10S5N015ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUT300N10S5N015ATMA1 IAUT300N10S5N015ATMA1 - 100V 300A OptiMOS 5 N-MOSFET | Infineon

IAUT300N10S5N015ATMA1 - 100V 300A OptiMOS 5 N-MOSFET | Infineon

IAUT300N10S5N015ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUC90N10S5N062ATMA1 IAUT300N10S5N015ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Tc=25C 90 A —
Maximum On-Resistance RDS(on) max at VGS=10V 6.2 mOhm —
Gate-Source Threshold Voltage VGS(th) typ 3.8 V —
Maximum Power Dissipation (Tc=25C) 115 W —
Suhu Hubungan Operasi -55 C to +175 C —
Kemasan PG-TDSON-8-34 (TDSON-8) PG-HSOF-8-1 (HSOF-8)
Jenis Pemasangan Surface Mount Surface Mount
Technology Trench MOSFET (OptiMOS 5, Generation 5) OptiMOS 5 N-Channel Power MOSFET
Avalanche Rated Yes (100% avalanche tested) —
MSL (Moisture Sensitivity Level) MSL1 (260 C peak reflow) —
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
RoHS / Green Product Yes (RoHS compliant, Green Product) —
Lead-Free Yes —
Continuous Drain Current (ID, Tc) — 300 A
Power Dissipation (PD, Tc) — 375 W
RDS(on) (typ, VGS=10V) — 1.5 mΩ
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th), typ) — [DATA_NEEDED: VGS(th) value]
Gambaran Suhu Operasi — -55°C to +175°C
Aras MSL — MSL1 (260°C peak reflow)
RoHS Compliance — RoHS compliant (Green product)
Avalanche Tested — 100% avalanche tested
Polarity — N-Channel
Mode of Operation — Enhancement-mode

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