IAUC90N10S5N062ATMA1 vs IAUT300N10S5N015ATMA1 比較

詳細並排比較 IAUC90N10S5N062ATMA1 由 Infineon 與 IAUT300N10S5N015ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUC90N10S5N062ATMA1 IAUC90N10S5N062ATMA1 - 100V 90A 6.2mOhm OptiMOS 5 MOSFET | Infineon

IAUC90N10S5N062ATMA1 - 100V 90A 6.2mOhm OptiMOS 5 MOSFET | Infineon

IAUC90N10S5N062ATMA1 ✓ 啟用中
Infineon
IAUT300N10S5N015ATMA1 IAUT300N10S5N015ATMA1 - 100V 300A OptiMOS 5 N-MOSFET | Infineon

IAUT300N10S5N015ATMA1 - 100V 300A OptiMOS 5 N-MOSFET | Infineon

IAUT300N10S5N015ATMA1 ✓ 啟用中

規格比較

參數 IAUC90N10S5N062ATMA1 IAUT300N10S5N015ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Tc=25C 90 A —
Maximum On-Resistance RDS(on) max at VGS=10V 6.2 mOhm —
Gate-Source Threshold Voltage VGS(th) typ 3.8 V —
Maximum Power Dissipation (Tc=25C) 115 W —
工作接面溫度 -55 C to +175 C —
封裝 PG-TDSON-8-34 (TDSON-8) PG-HSOF-8-1 (HSOF-8)
安裝類型 Surface Mount Surface Mount
Technology Trench MOSFET (OptiMOS 5, Generation 5) OptiMOS 5 N-Channel Power MOSFET
Avalanche Rated Yes (100% avalanche tested) —
MSL (Moisture Sensitivity Level) MSL1 (260 C peak reflow) —
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
RoHS / Green Product Yes (RoHS compliant, Green Product) —
Lead-Free Yes —
Continuous Drain Current (ID, Tc) — 300 A
Power Dissipation (PD, Tc) — 375 W
RDS(on) (typ, VGS=10V) — 1.5 mΩ
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th), typ) — [DATA_NEEDED: VGS(th) value]
工作溫度範圍 — -55°C to +175°C
MSL 等級 — MSL1 (260°C peak reflow)
RoHS Compliance — RoHS compliant (Green product)
Avalanche Tested — 100% avalanche tested
Polarity — N-Channel
Mode of Operation — Enhancement-mode

資料表與資源

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