IAUCN04S7N006ATMA1 vs IAUCN04S7N009ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7N006ATMA1 disebabkan oleh Infineon dan IAUCN04S7N009ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUCN04S7N006ATMA1 - 40V 175A OptiMOS N-Channel MOSFET | Infineon
IAUCN04S7N006ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUCN04S7N006ATMA1 | IAUCN04S7N009ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) | 175 A | — |
| On-State Resistance (RDS(on)) | 0.63 mOhm (typ at VGS = 10 V) | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Technology | OptiMOS 5 (trench) | MOSFET (Metal Oxide) |
| Kemasan | PG-TDSON-8-43 | PG-TDSON-8-34 (Surface Mount) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55 C to +175 C | — |
| Junction Temperature Max | 175 C | — |
| Power Dissipation Max (Pd) | [DATA_NEEDED: Pd max] | — |
| Gate Charge Total (Qg) | [DATA_NEEDED: Qg total] | — |
| Automotive Qualification | AEC-Q101 | — |
| Lead-Free / RoHS | Yes (compliant) | — |
| Aras MSL | [DATA_NEEDED: MSL rating] | 1 |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 7 |
| Drain-to-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D) | — | 175 A |
| R_DS(on) Max @ V_GS = 10 V | — | 0.96 mΩ |
| Gate Drive Voltage (V_GS) | — | 10 V |
| Suhu Operasi | — | -55C to +175C |
| Qualification | — | AEC-Q101 (Automotive) |
| Status RoHS | — | Compliant |
| Configuration | — | Single N-Channel |
| Supplier Device Package | — | PG-TDSON-8-34 |