IAUCN04S7N015GATMA1 vs IAUCN04S7N027GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7N015GATMA1 disebabkan oleh Infineon dan IAUCN04S7N027GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUCN04S7N015GATMA1 IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUCN04S7N015GATMA1 IAUCN04S7N027GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 OptiMOS 7
Channel Type N-Channel N-Channel
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D) 165 A (Tc) —
Power Dissipation (P_D) 96 W (Tc) —
R_DS(on) max 1.53 mΩ at V_GS=10 V —
Gate-Source Voltage (V_GS) max [DATA_NEEDED: V_GS max] —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical] —
Kemasan PG-THSOG-4-1 (SSO4G 5x6) surface mount —
Suhu Hubungan Operasi -55C to +175C —
Automotive Qualification AEC-Q101 qualified —
Total Gate Charge (Q_G) [DATA_NEEDED: total gate charge] —
Status RoHS Compliant Compliant
Jenis Pemasangan Surface Mount (IMS-compatible source-down) Surface Mount
Aras MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL]
Drain-Source Voltage (Vds max) — 40 V
Continuous Drain Current (Id) — 117 A
On-Resistance (Rds(on) max) — 2.67 mOhm
Power Dissipation (Pd) — 70 W (Tc)
Kemasan / Case — PG-THSOG-4-1 (SSO4G 5x6)
Qualification — Automotive
Gambaran Suhu Operasi — [DATA_NEEDED: operating temperature range]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th)]
Gate-Source Voltage Max (Vgs) — [DATA_NEEDED: Vgs max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Substrate Compatibility — IMS substrates and legacy FR-4

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