IAUCN04S7N015GATMA1 vs IAUCN04S7N027GATMA1 比較
詳細並排比較 IAUCN04S7N015GATMA1 由 Infineon 與 IAUCN04S7N027GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IAUCN04S7N015GATMA1 | IAUCN04S7N027GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | OptiMOS 7 |
| Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D) | 165 A (Tc) | — |
| Power Dissipation (P_D) | 96 W (Tc) | — |
| R_DS(on) max | 1.53 mΩ at V_GS=10 V | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | — |
| 封裝 | PG-THSOG-4-1 (SSO4G 5x6) surface mount | — |
| 工作接面溫度 | -55C to +175C | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Total Gate Charge (Q_G) | [DATA_NEEDED: total gate charge] | — |
| RoHS 狀態 | Compliant | Compliant |
| 安裝類型 | Surface Mount (IMS-compatible source-down) | Surface Mount |
| MSL 等級 | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL] |
| Drain-Source Voltage (Vds max) | — | 40 V |
| Continuous Drain Current (Id) | — | 117 A |
| On-Resistance (Rds(on) max) | — | 2.67 mOhm |
| Power Dissipation (Pd) | — | 70 W (Tc) |
| 封裝 / 外殼 | — | PG-THSOG-4-1 (SSO4G 5x6) |
| Qualification | — | Automotive |
| 工作溫度範圍 | — | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th)] |
| Gate-Source Voltage Max (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| Substrate Compatibility | — | IMS substrates and legacy FR-4 |