IAUCN04S7N019GATMA1 vs IAUCN04S7L005ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7N019GATMA1 disebabkan oleh Infineon dan IAUCN04S7L005ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN04S7N019GATMA1 IAUCN04S7L005ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 7 —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tj) 147 A —
On-Resistance RDS(on) typical 1.95 mOhm —
Maximum Power Dissipation (Tc) 81 W —
Kemasan PG-THSOG-4-1 (SSO4G 5x6 mm) PG-TDSON-8-43 (TDSON-8)
Jenis Pemasangan Surface Mount Surface Mount
Substrate Compatibility IMS substrates and legacy PCB —
Automotive Qualification AEC-Q101 (per family datasheet) AEC-Q101 qualified
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Tape and Reel Packaging Yes (per ATMA1 suffix) —
Gambaran Suhu Operasi [DATA_NEEDED: junction temperature range from datasheet] -55°C to +175°C (Tj)
Technology — OptiMOS 7 (trench N-channel MOSFET)
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D, T_C=25°C) — 430 A (Tj)
Continuous Drain Current (I_D, T_C=100°C) — [DATA_NEEDED: I_D at T_C=100°C]
On-Resistance R_DS(on) max — 0.52 mΩ
Power Dissipation (P_D) — 179 W (T_C)
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical and min/max]
Total Gate Charge (Q_g) — [DATA_NEEDED: total Q_g in nC]
Kiraan Pin — 8
Aras MSL — [DATA_NEEDED: MSL rating]

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga