IAUCN04S7N024HATMA1 vs IAUCN04S7N019GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7N024HATMA1 disebabkan oleh Infineon dan IAUCN04S7N019GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN04S7N024HATMA1 IAUCN04S7N019GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS-7 40 V —
Configuration Dual N-Channel (independent) —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D, Tj) 100 A —
On-Resistance R_DS(on) typ 2.46 mΩ at V_GS = 10 V —
On-Resistance R_DS(on) max [DATA_NEEDED: max R_DS(on) at 10 V V_GS] —
Maximum Power Dissipation (Tc) 75 W 81 W
Kemasan PG-TDSON-8-56 (SSO8 HB 5x6 mm) PG-THSOG-4-1 (SSO4G 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: operating temperature range] [DATA_NEEDED: junction temperature range from datasheet]
Automotive Qualification AEC-Q101 AEC-Q101 (per family datasheet)
Technology OptiMOS-7 trench-gate —
Gate Threshold Voltage V_GS(th) [DATA_NEEDED: typical V_GS(th)] —
Total Gate Charge Qg [DATA_NEEDED: total Qg] —
Status RoHS Compliant Compliant
Aras MSL 1 (per JEDEC J-STD-020) —
Packing Tape & Reel —
Product Family — OptiMOS 7
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tj) — 147 A
On-Resistance RDS(on) typical — 1.95 mOhm
Substrate Compatibility — IMS substrates and legacy PCB
Lead-Free — Yes
Tape and Reel Packaging — Yes (per ATMA1 suffix)

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