IAUCN04S7N027GATMA1 vs IAUCN04S6N013TATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7N027GATMA1 disebabkan oleh Infineon dan IAUCN04S6N013TATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN04S7N027GATMA1 IAUCN04S6N013TATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 7 —
Channel Type N-Channel —
Drain-Source Voltage (Vds max) 40 V —
Continuous Drain Current (Id) 117 A —
On-Resistance (Rds(on) max) 2.67 mOhm —
Power Dissipation (Pd) 70 W (Tc) —
Kemasan / Case PG-THSOG-4-1 (SSO4G 5x6) —
Jenis Pemasangan Surface Mount Surface Mount
Qualification Automotive —
Gambaran Suhu Operasi [DATA_NEEDED: operating temperature range] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th)] —
Gate-Source Voltage Max (Vgs) [DATA_NEEDED: Vgs max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL] —
Substrate Compatibility IMS substrates and legacy FR-4 —
FET Type — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 40 V
Continuous Drain Current (I<sub>D</sub>) — 230 A at T<sub>C</sub>
R<sub>DS(on)</sub> (max) — 1.32 mΩ at V<sub>GS</sub> = 10 V
Power Dissipation (P<sub>D</sub>) — 133 W at T<sub>C</sub>
Gate Threshold Voltage (V<sub>GS(th)</sub>) — 2.6 V (typ)
Total Gate Charge (Q<sub>g</sub>) — 52 nC at V<sub>GS</sub> = 10 V
Input Capacitance (C<sub>iss</sub>) — 1.08 nF
Output Capacitance (C<sub>oss</sub>) — 3.7 nF
Reverse Transfer Capacitance (C<sub>rss</sub>) — 51 pF
Suhu Hubungan Operasi — -55 °C to +175 °C
Kemasan — PG-LHDSO-10-1 (SSO10T)
Automotive Qualification — AEC-Q101

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