IAUCN04S7N027GATMA1 vs IAUCN04S6N013TATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7N027GATMA1 by Infineon and IAUCN04S6N013TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6
IAUCN04S7N027GATMA1 β ActiveInfineon
IAUCN04S6N013TATMA1 - 40V N-Channel Automotive MOSFET | Infineon
IAUCN04S6N013TATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7N027GATMA1 | IAUCN04S6N013TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.72 | $1.66 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 7 | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (Vds max) | 40 V | β |
| Continuous Drain Current (Id) | 117 A | β |
| On-Resistance (Rds(on) max) | 2.67 mOhm | β |
| Power Dissipation (Pd) | 70 W (Tc) | β |
| Package / Case | PG-THSOG-4-1 (SSO4G 5x6) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | Automotive | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | β |
| Gate-Source Voltage Max (Vgs) | [DATA_NEEDED: Vgs max] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL] | β |
| Substrate Compatibility | IMS substrates and legacy FR-4 | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | β | 40 V |
| Continuous Drain Current (I<sub>D</sub>) | β | 230 A at T<sub>C</sub> |
| R<sub>DS(on)</sub> (max) | β | 1.32 mΞ© at V<sub>GS</sub> = 10 V |
| Power Dissipation (P<sub>D</sub>) | β | 133 W at T<sub>C</sub> |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | β | 2.6 V (typ) |
| Total Gate Charge (Q<sub>g</sub>) | β | 52 nC at V<sub>GS</sub> = 10 V |
| Input Capacitance (C<sub>iss</sub>) | β | 1.08 nF |
| Output Capacitance (C<sub>oss</sub>) | β | 3.7 nF |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | β | 51 pF |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Package | β | PG-LHDSO-10-1 (SSO10T) |
| Automotive Qualification | β | AEC-Q101 |