IAUCN08S7N024ATMA1 vs IAUCN04S7N006ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN08S7N024ATMA1 disebabkan oleh Infineon dan IAUCN04S7N006ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN08S7N024ATMA1 IAUCN04S7N006ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series Automotive OptiMOS 7 (80 V) —
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 80 V 40 V
Continuous Drain Current (ID) at TC=25C 165 A —
Drain-Source On-Resistance (RDS(on)) max 2.4 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Technology OptiMOS 7 trench OptiMOS 5 (trench)
Kemasan PG-TDSON-8-34 (8-pin, exposed pad) PG-TDSON-8-43
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +175C (typical automotive) -55 C to +175 C
Pembuangan Kuasa (Ptot) [DATA_NEEDED: Ptot @ TC=25C] —
Automotive Qualification AEC-Q101 AEC-Q101
RoHS Compliance Compliant —
Aras MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Typical Application 48 V automotive DC-DC, motor drive, load switch —
Continuous Drain Current (ID) — 175 A
On-State Resistance (RDS(on)) — 0.63 mOhm (typ at VGS = 10 V)
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Junction Temperature Max — 175 C
Power Dissipation Max (Pd) — [DATA_NEEDED: Pd max]
Gate Charge Total (Qg) — [DATA_NEEDED: Qg total]
Lead-Free / RoHS — Yes (compliant)

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