IAUCN10S5L280DATMA1 vs IAUC100N10S5L054ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN10S5L280DATMA1 disebabkan oleh Infineon dan IAUC100N10S5L054ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC100N10S5L054ATMA1 IAUC100N10S5L054ATMA1 - 100V 5.4mΩ N-Ch MOSFET | Infineon

IAUC100N10S5L054ATMA1 - 100V 5.4mΩ N-Ch MOSFET | Infineon

IAUC100N10S5L054ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUCN10S5L280DATMA1 IAUC100N10S5L054ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 —
Configuration Dual N-Channel MOSFET Array —
Drain-Source Voltage (Vds) 100 V —
Continuous Drain Current (Id) at Tj 23 A —
Power Dissipation (Pd) at Tc 38 W —
Kemasan PG-TDSON-8-61 (SSO8) PG-TDSON-8-34 (surface mount)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualified Yes (AEC-Q101, IAU prefix) —
Technology OptiMOS 5 Trench MOSFET OptiMOS 5 trench
Gambaran Suhu Operasi -55C to +175C (junction) -55°C to +175°C
Kiraan Pin 8 —
Aras MSL 1 [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Packing Tape & Reel (T&R) —
Series — OptiMOS 5 (IAUC automotive family)
Jenis Transistor — N-Channel MOSFET
Drain-to-Source Voltage (V_DS) — 100 V
Gate-to-Source Voltage (V_GS) — [DATA_NEEDED: max V_GS value]
Continuous Drain Current (I_D, Tj) — 101 A
Power Dissipation (P_D, Tc) — 130 W
R_DS(on) max at V_GS=10V — 5.4 mΩ
Qualification — AEC-Q101 (automotive)

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