IAUCN10S5L280DATMA1 vs IAUC100N10S5L054ATMA1 比較

詳細並排比較 IAUCN10S5L280DATMA1 由 Infineon 與 IAUC100N10S5L054ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUCN10S5L280DATMA1 IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon

IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon

IAUCN10S5L280DATMA1 ✓ 啟用中
Infineon
IAUC100N10S5L054ATMA1 IAUC100N10S5L054ATMA1 - 100V 5.4mΩ N-Ch MOSFET | Infineon

IAUC100N10S5L054ATMA1 - 100V 5.4mΩ N-Ch MOSFET | Infineon

IAUC100N10S5L054ATMA1 ✓ 啟用中

規格比較

參數 IAUCN10S5L280DATMA1 IAUC100N10S5L054ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 —
Configuration Dual N-Channel MOSFET Array —
Drain-Source Voltage (Vds) 100 V —
Continuous Drain Current (Id) at Tj 23 A —
Power Dissipation (Pd) at Tc 38 W —
封裝 PG-TDSON-8-61 (SSO8) PG-TDSON-8-34 (surface mount)
安裝類型 Surface Mount Surface Mount
Automotive Qualified Yes (AEC-Q101, IAU prefix) —
Technology OptiMOS 5 Trench MOSFET OptiMOS 5 trench
工作溫度範圍 -55C to +175C (junction) -55°C to +175°C
腳位數 8 —
MSL 等級 1 [DATA_NEEDED: MSL rating]
RoHS 狀態 Compliant Compliant
Packing Tape & Reel (T&R) —
Series — OptiMOS 5 (IAUC automotive family)
電晶體類型 — N-Channel MOSFET
Drain-to-Source Voltage (V_DS) — 100 V
Gate-to-Source Voltage (V_GS) — [DATA_NEEDED: max V_GS value]
Continuous Drain Current (I_D, Tj) — 101 A
Power Dissipation (P_D, Tc) — 130 W
R_DS(on) max at V_GS=10V — 5.4 mΩ
Qualification — AEC-Q101 (automotive)

資料表與資源

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