IAUCN10S7L290TATMA1 vs IAUCN08S7N024TATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN10S7L290TATMA1 disebabkan oleh Infineon dan IAUCN08S7N024TATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 ✓ AktifInfineon
IAUCN08S7N024TATMA1 - 80V 2.44mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN08S7N024TATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUCN10S7L290TATMA1 | IAUCN08S7N024TATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ 7 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at TC=25°C | 27 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | — |
| On-Resistance RDS(on) max @ VGS=10V | 28.6 mΩ | — |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5 V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25°C | 45 W | — |
| Suhu Hubungan Operasi | -55 °C to +175 °C | — |
| Kemasan | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| RoHS Compliance | Compliant | — |
| Lead-Free | Yes | — |
| Avalanche Rated | Yes | — |
| ESD Protection | HBM Class 1C (per Infineon datasheet) | — |
| Series | — | OptiMOS 7 |
| FET Type | — | N-Channel |
| Technology | — | MOSFET (Metal Oxide Semiconductor) |
| Drain-Source Voltage (Vds) | — | 80 V |
| Continuous Drain Current (Id) at Tj | — | 165 A |
| Power Dissipation (Pd) at Tc | — | 157 W |
| Rds(on) Max at Vgs=10V | — | 2.44 mOhm |
| Kemasan / Case | — | PG-LHDSO-10-1 (SSO10T, 5x7 mm²) |
| Cooling | — | Top-side cooled |
| Gambaran Suhu Operasi | — | [DATA_NEEDED: operating temperature range] |
| Status RoHS | — | Compliant |
| Gate Threshold (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typ] |