IAUCN10S7L290TATMA1 vs IAUCN10S5L280DATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN10S7L290TATMA1 disebabkan oleh Infineon dan IAUCN10S5L280DATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN10S7L290TATMA1 IAUCN10S5L280DATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ 7 OptiMOS 5
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) at TC=25°C 27 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulse rating] —
On-Resistance RDS(on) max @ VGS=10V 28.6 mΩ —
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5 V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (PD) at TC=25°C 45 W —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled PG-TDSON-8-61 (SSO8)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q100 qualified —
Aras MSL 1 (per JEDEC J-STD-020) 1
RoHS Compliance Compliant —
Lead-Free Yes —
Avalanche Rated Yes —
ESD Protection HBM Class 1C (per Infineon datasheet) —
Configuration — Dual N-Channel MOSFET Array
Drain-Source Voltage (Vds) — 100 V
Continuous Drain Current (Id) at Tj — 23 A
Power Dissipation (Pd) at Tc — 38 W
Automotive Qualified — Yes (AEC-Q101, IAU prefix)
Technology — OptiMOS 5 Trench MOSFET
Gambaran Suhu Operasi — -55C to +175C (junction)
Kiraan Pin — 8
Status RoHS — Compliant
Packing — Tape & Reel (T&R)

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