IAUCN10S7N021ATMA1 vs IAUC100N04S6L025ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN10S7N021ATMA1 disebabkan oleh Infineon dan IAUC100N04S6L025ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC100N04S6L025ATMA1 IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L025ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUCN10S7N021ATMA1 IAUC100N04S6L025ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS™ 7 (trench MOSFET) OptiMOS 6 40V trench MOSFET
Drain-Source Voltage (VDS) 100 V 40 V
Continuous Drain Current (ID) at Tc 175 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current IDM] [DATA_NEEDED: IDM pulse rating]
RDS(on) max @ VGS=10 V 2.1 mΩ —
Gate-Source Threshold (VGS(th)) typ 3.2 V —
Total Gate Charge (Qg) @ VGS=10 V 105 nC —
Input Capacitance (Ciss) 2.98 nF —
Output Capacitance (Coss) 32 pF —
Reverse Transfer Capacitance (Crss) 7.153 nF —
Power Dissipation (Pd) @ Tc 217 W —
Suhu Hubungan Operasi -55 °C to +175 °C -55 C to +175 C
Kemasan PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad PG-TDSON-8 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Qualification AEC-Q101 (Automotive) —
Status RoHS Compliant Compliant
Polarity — N-Channel
Continuous Drain Current (ID) at TC=25C — 100 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
On-State Resistance RDS(on) max at VGS=10V — 2.5 mOhm
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Power Dissipation (PD) at TC=25C — 62 W
Automotive Qualification — AEC-Q101 qualified
Aras MSL — 1 (per JEDEC J-STD-020)
Lead-Free — Yes

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