IAUTN04S7N004ATMA1 vs IAUCN04S7N027GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUTN04S7N004ATMA1 disebabkan oleh Infineon dan IAUCN04S7N027GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IAUTN04S7N004ATMA1 | IAUCN04S7N027GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | OptiMOS 7 |
| Technology | N-Channel Trench MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25C | [DATA_NEEDED: ID at TC=25C] | — |
| Continuous Drain Current (ID) at Tj | 350 A | — |
| On-Resistance RDS(on) max | 0.38 mΩ | — |
| Power Dissipation (PD) at TC | 255 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Gambaran Suhu Operasi | -55C to +175C | [DATA_NEEDED: operating temperature range] |
| Kemasan | PG-HSOF-8-8 (TOLL 10x12) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 Automotive | Automotive |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Polarity | N-Channel | — |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (Vds max) | — | 40 V |
| Continuous Drain Current (Id) | — | 117 A |
| On-Resistance (Rds(on) max) | — | 2.67 mOhm |
| Power Dissipation (Pd) | — | 70 W (Tc) |
| Kemasan / Case | — | PG-THSOG-4-1 (SSO4G 5x6) |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th)] |
| Gate-Source Voltage Max (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| Aras MSL | — | [DATA_NEEDED: MSL] |
| Substrate Compatibility | — | IMS substrates and legacy FR-4 |