IAUTN04S7N004ATMA1 vs IAUCN04S7N027GATMA1 比較
詳細並排比較 IAUTN04S7N004ATMA1 由 Infineon 與 IAUCN04S7N027GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IAUTN04S7N004ATMA1 | IAUCN04S7N027GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | OptiMOS 7 |
| Technology | N-Channel Trench MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25C | [DATA_NEEDED: ID at TC=25C] | — |
| Continuous Drain Current (ID) at Tj | 350 A | — |
| On-Resistance RDS(on) max | 0.38 mΩ | — |
| Power Dissipation (PD) at TC | 255 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| 工作溫度範圍 | -55C to +175C | [DATA_NEEDED: operating temperature range] |
| 封裝 | PG-HSOF-8-8 (TOLL 10x12) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 Automotive | Automotive |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Polarity | N-Channel | — |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (Vds max) | — | 40 V |
| Continuous Drain Current (Id) | — | 117 A |
| On-Resistance (Rds(on) max) | — | 2.67 mOhm |
| Power Dissipation (Pd) | — | 70 W (Tc) |
| 封裝 / 外殼 | — | PG-THSOG-4-1 (SSO4G 5x6) |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th)] |
| Gate-Source Voltage Max (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| MSL 等級 | — | [DATA_NEEDED: MSL] |
| Substrate Compatibility | — | IMS substrates and legacy FR-4 |