IAUZ20N08S5L300ATMA1 vs IAUC28N08S5L230ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUZ20N08S5L300ATMA1 disebabkan oleh Infineon dan IAUC28N08S5L230ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUZ20N08S5L300ATMA1 IAUZ20N08S5L300ATMA1 - 80V 20A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ20N08S5L300ATMA1 - 80V 20A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ20N08S5L300ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUZ20N08S5L300ATMA1 IAUC28N08S5L230ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-5 —
Polarity N-Channel —
Drain-Source Voltage (Vds) 80 V —
Continuous Drain Current (Id) 20 A (Tc) —
Power Dissipation (Pd) 30 W (Tc) —
On-State Resistance (Rds(on)) 30 mΩ @ 10 A, 10 V —
Gate Threshold Voltage (Vgs(th)) ±20 V (max Vgs rating) —
Input Capacitance (Ciss) 599 pF @ 40 V —
Total Gate Charge (Qg) 10.5 nC @ 10 V —
Suhu Hubungan Operasi -55°C to +175°C -55 °C to +175 °C
Kemasan PG-TSDSON-8-32 (S3O8) 3.3 x 3.3 mm PG-TDSON-8-33 (5x6 mm SSO8)
Jenis Pemasangan Surface Mount Surface Mount
Qualification AEC-Q101 (automotive) —
Technology Trench MOSFET (OptiMOS-5) OptiMOS-5 Power MOSFET
Status RoHS Compliant Compliant
Series — OptiMOS-5
FET Type — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 80 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>) — 28 A
Pulsed Drain Current (I<sub>DM</sub>) — [DATA_NEEDED: pulsed drain current]
On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) — 23 mΩ (typ)
Gate-Source Threshold (V<sub>GS(th)</sub>, typ) — 2.5 V
Gate Charge (Q<sub>g</sub>, typ) — [DATA_NEEDED: total gate charge]
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) — 38 W
Automotive Qualified — Yes (AEC-Q101)
Aras MSL — [DATA_NEEDED: MSL rating]

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