IAUZ20N08S5L300ATMA1 vs IAUC28N08S5L230ATMA1 比較

詳細並排比較 IAUZ20N08S5L300ATMA1 由 Infineon 與 IAUC28N08S5L230ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUZ20N08S5L300ATMA1 IAUZ20N08S5L300ATMA1 - 80V 20A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ20N08S5L300ATMA1 - 80V 20A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ20N08S5L300ATMA1 ✓ 啟用中

規格比較

參數 IAUZ20N08S5L300ATMA1 IAUC28N08S5L230ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-5 —
Polarity N-Channel —
Drain-Source Voltage (Vds) 80 V —
Continuous Drain Current (Id) 20 A (Tc) —
Power Dissipation (Pd) 30 W (Tc) —
On-State Resistance (Rds(on)) 30 mΩ @ 10 A, 10 V —
Gate Threshold Voltage (Vgs(th)) ±20 V (max Vgs rating) —
Input Capacitance (Ciss) 599 pF @ 40 V —
Total Gate Charge (Qg) 10.5 nC @ 10 V —
工作接面溫度 -55°C to +175°C -55 °C to +175 °C
封裝 PG-TSDSON-8-32 (S3O8) 3.3 x 3.3 mm PG-TDSON-8-33 (5x6 mm SSO8)
安裝類型 Surface Mount Surface Mount
Qualification AEC-Q101 (automotive) —
Technology Trench MOSFET (OptiMOS-5) OptiMOS-5 Power MOSFET
RoHS 狀態 Compliant Compliant
Series — OptiMOS-5
FET Type — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 80 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>) — 28 A
Pulsed Drain Current (I<sub>DM</sub>) — [DATA_NEEDED: pulsed drain current]
On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) — 23 mΩ (typ)
Gate-Source Threshold (V<sub>GS(th)</sub>, typ) — 2.5 V
Gate Charge (Q<sub>g</sub>, typ) — [DATA_NEEDED: total gate charge]
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) — 38 W
Automotive Qualified — Yes (AEC-Q101)
MSL 等級 — [DATA_NEEDED: MSL rating]

資料表與資源

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