IAUZ30N10S5L240ATMA1 vs BSC097N06NSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUZ30N10S5L240ATMA1 disebabkan oleh Infineon dan BSC097N06NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUZ30N10S5L240ATMA1 BSC097N06NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Technology OptiMOS 5 (trench) OptiMOS 5 (Trench)
Drain-Source Voltage (V_DS) 100 V —
Continuous Drain Current (I_D, Tc) 30 A —
R_DS(on) max at V_GS=10V 24 mΩ —
Gate-Source Voltage (V_GS) max ±20 V —
Gate Charge (Q_g) typ 14 nC at V_GS=10V —
Input Capacitance (C_iss) typ 832 pF at V_DS=50V —
Power Dissipation (P_D, Tc) 45.5 W —
Kemasan PG-TSDSON-8-32 (8-PowerTDFN, exposed drain pad) —
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55°C to +175°C (junction, automotive grade) —
Automotive Qualification AEC-Q101 qualified —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) value] —
Status RoHS Compliant Compliant
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen-free status] —
Manufacturer — Infineon Technologies
Series — OptiMOS 5
Part Status — Active
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Tc=25C — 46 A
Continuous Drain Current (ID) at Ta=25C — [DATA_NEEDED: ID at Ta=25C PCB-mounted]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM peak value]
RDS(on) max at VGS=10 V — 9.7 mOhm
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
Gate Charge (Qg typ) — [DATA_NEEDED: total gate charge Qg]
Power Dissipation at Ta=25C — 2.5 W
Power Dissipation at Tc=25C — 36 W
Suhu Hubungan Operasi — -55C to +150C
Kemasan / Case — PG-TDSON-8-6 (SuperSO8 5x6 mm)
Aras MSL — 1 (Unlimited)
Avalanche Rated — Yes (EAS per datasheet)

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