IAUZ30N10S5L240ATMA1 vs BSC097N06NSATMA1 Comparison

Detailed side-by-side comparison of IAUZ30N10S5L240ATMA1 by Infineon and BSC097N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IAUZ30N10S5L240ATMA1 BSC097N06NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel N-Channel
Technology OptiMOS 5 (trench) OptiMOS 5 (Trench)
Drain-Source Voltage (V_DS) 100 V —
Continuous Drain Current (I_D, Tc) 30 A —
R_DS(on) max at V_GS=10V 24 mΩ —
Gate-Source Voltage (V_GS) max ±20 V —
Gate Charge (Q_g) typ 14 nC at V_GS=10V —
Input Capacitance (C_iss) typ 832 pF at V_DS=50V —
Power Dissipation (P_D, Tc) 45.5 W —
Package PG-TSDSON-8-32 (8-PowerTDFN, exposed drain pad) —
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55°C to +175°C (junction, automotive grade) —
Automotive Qualification AEC-Q101 qualified —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) value] —
RoHS Status Compliant Compliant
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen-free status] —
Manufacturer — Infineon Technologies
Series — OptiMOS 5
Part Status — Active
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Tc=25C — 46 A
Continuous Drain Current (ID) at Ta=25C — [DATA_NEEDED: ID at Ta=25C PCB-mounted]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM peak value]
RDS(on) max at VGS=10 V — 9.7 mOhm
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
Gate Charge (Qg typ) — [DATA_NEEDED: total gate charge Qg]
Power Dissipation at Ta=25C — 2.5 W
Power Dissipation at Tc=25C — 36 W
Operating Junction Temperature — -55C to +150C
Package / Case — PG-TDSON-8-6 (SuperSO8 5x6 mm)
MSL Level — 1 (Unlimited)
Avalanche Rated — Yes (EAS per datasheet)

Datasheets & Resources

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