IAUZ30N10S5L240ATMA1 vs BSC097N06NSATMA1 Comparison
Detailed side-by-side comparison of IAUZ30N10S5L240ATMA1 by Infineon and BSC097N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZ30N10S5L240ATMA1 - 100V 30A 24mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUZ30N10S5L240ATMA1 β Active
Specification Comparison
| Parameter | IAUZ30N10S5L240ATMA1 | BSC097N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.86 | $0.38 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 5 (trench) | OptiMOS 5 (Trench) |
| Drain-Source Voltage (V_DS) | 100 V | β |
| Continuous Drain Current (I_D, Tc) | 30 A | β |
| R_DS(on) max at V_GS=10V | 24 mΞ© | β |
| Gate-Source Voltage (V_GS) max | Β±20 V | β |
| Gate Charge (Q_g) typ | 14 nC at V_GS=10V | β |
| Input Capacitance (C_iss) typ | 832 pF at V_DS=50V | β |
| Power Dissipation (P_D, Tc) | 45.5 W | β |
| Package | PG-TSDSON-8-32 (8-PowerTDFN, exposed drain pad) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +175Β°C (junction, automotive grade) | β |
| Automotive Qualification | AEC-Q101 qualified | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) value] | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 5 |
| Part Status | β | Active |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at Tc=25C | β | 46 A |
| Continuous Drain Current (ID) at Ta=25C | β | [DATA_NEEDED: ID at Ta=25C PCB-mounted] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM peak value] |
| RDS(on) max at VGS=10 V | β | 9.7 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | β | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg typ) | β | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation at Ta=25C | β | 2.5 W |
| Power Dissipation at Tc=25C | β | 36 W |
| Operating Junction Temperature | β | -55C to +150C |
| Package / Case | β | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| MSL Level | β | 1 (Unlimited) |
| Avalanche Rated | β | Yes (EAS per datasheet) |