IAUZ30N10S5L240ATMA1 vs BSC097N06NSATMA1 Сравнение
Подробное сравнение бок о бок IAUZ30N10S5L240ATMA1 от Infineon и BSC097N06NSATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IAUZ30N10S5L240ATMA1 - 100V 30A 24mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ30N10S5L240ATMA1 ✓ Активен
Сравнение характеристик
| Параметр | IAUZ30N10S5L240ATMA1 | BSC097N06NSATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,86 | $0,38 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 5 (trench) | OptiMOS 5 (Trench) |
| Drain-Source Voltage (V_DS) | 100 V | — |
| Continuous Drain Current (I_D, Tc) | 30 A | — |
| R_DS(on) max at V_GS=10V | 24 mΩ | — |
| Gate-Source Voltage (V_GS) max | ±20 V | — |
| Gate Charge (Q_g) typ | 14 nC at V_GS=10V | — |
| Input Capacitance (C_iss) typ | 832 pF at V_DS=50V | — |
| Power Dissipation (P_D, Tc) | 45.5 W | — |
| Корпус | PG-TSDSON-8-32 (8-PowerTDFN, exposed drain pad) | — |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | -55°C to +175°C (junction, automotive grade) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) value] | — |
| Статус RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |
| Part Status | — | Active |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc=25C | — | 46 A |
| Continuous Drain Current (ID) at Ta=25C | — | [DATA_NEEDED: ID at Ta=25C PCB-mounted] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM peak value] |
| RDS(on) max at VGS=10 V | — | 9.7 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg typ) | — | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation at Ta=25C | — | 2.5 W |
| Power Dissipation at Tc=25C | — | 36 W |
| Рабочая температура перехода | — | -55C to +150C |
| Корпус / Типоразмер | — | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Уровень MSL | — | 1 (Unlimited) |
| Avalanche Rated | — | Yes (EAS per datasheet) |