IAUZ40N06S5N050ATMA1 vs IAUZ40N06S5L050ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUZ40N06S5N050ATMA1 disebabkan oleh Infineon dan IAUZ40N06S5L050ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUZ40N06S5L050ATMA1 - 60V 90A 5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ40N06S5L050ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUZ40N06S5N050ATMA1 | IAUZ40N06S5L050ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, TC) | 40 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-State Resistance (RDS(on), typ) | 5 mΩ at VGS=10 V | — |
| Maximum Power Dissipation (PD) | 71 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th), typ) | 1.7 V | — |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 (super-junction N-channel) |
| Channel Type | N-Channel Enhancement Mode | — |
| Kemasan | PG-TSDSON-8-33 (3.3 x 3.3 mm) | PG-TSDSON-8-33 (TSDSON-8) |
| Kiraan Pin | 8 | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Thermal Resistance (RthJC, max) | [DATA_NEEDED: RthJC] | — |
| Gambaran Suhu Operasi | -55C to +175C | — |
| Automotive Qualification | AEC-Q101 Qualified | AEC-Q100 qualified |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 | — |
| Packaging | Tape & Reel | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 60 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | [DATA_NEEDED: continuous drain current at Tc=25C] |
| Drain Current at T<sub>j</sub> | — | 90 A |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V | — | 5 mΩ |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A | — | 6.4 mΩ |
| Gate Threshold Voltage V<sub>GS(th)</sub> | — | 2.2 V at 29 µA |
| Total Gate Charge Q<sub>G</sub> | — | 28.2 nC |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | — | 71 W |
| Suhu Hubungan Operasi | — | -55 °C to +175 °C |